Defect distribution in a-plane GaN on Al2O3
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منابع مشابه
Microcathodoluminescence of impurity doping at gallium nitrideÕsapphire interfaces
We have used low-temperature cathodoluminescence spectroscopy ~CLS! to probe the spatial distribution and energies of electronic defects near GaN/Al2O3 interfaces grown by hydride vapor phase epitaxy ~HVPE!. Cross sectional secondary electron microscopy CLS shows systematic variations in impurity/defect emissions over a wide range of HVPE GaN/Sapphire electronic properties. These data, along wi...
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Atomic layer deposited (ALD) Al2O3/Ga-polar GaN(0001) metal–oxide–semiconductor (MOS) capacitors have been prepared with surface pretreatments including ex-situ wet sulfide passivation and in-situ cyclic trimethylaluminum (TMA)/hydrogen plasma exposure. Capacitance–voltage characterization showed that the two-step surface preparation led to reductions in the densities of both interface traps an...
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We describe epitaxial methods for two different semipolar GaN orientations on patterned sapphire substrates: With (101̄2) (r-plane) sapphire substrates we achieve planar (112̄2) GaN layers with smooth surfaces on a large scale. In the case of (112̄3) (n-plane) patterned wafers the growth of (101̄1) GaN is possible. We optimized the growth conditions for (112̄2) GaN (especially the growth temperature...
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Internal polarizations field which take place in quantum structures of group-III nitrides have an important consequence on their optical properties. Optical properties of wurtzite AlGaN/GaN quantum well (QW) structures grown by MBE and MOCVD on c-plane sapphire substrates have been investigated by means of photoluminescence (PL) and time resolved photoluminescence (TRPL) at low-temperature. PL ...
متن کاملCorrelation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides.
Erbium-doped GaN (GaN:Er) epilayers were synthesized by metal organic chemical vapor deposition. GaN:Er waveguides were fabricated based on four different GaN:Er layer structures: GaN:Er/GaN/Al2O3, GaN:Er/GaN/AlN/Al2O3, GaN:Er/GaN/Al(0.75)Ga(0.25)N/AlN/Al2O3, and GaN/GaN:Er/GaN/Al2O3. Optical loss at 1.54 μm in these waveguide structures has been measured. It was found that the optical attenuat...
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تاریخ انتشار 2015